[1]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-WO2010/137601,2010,A1Locationinpatent:Page/Pagecolumn64-65
[2]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-EP2330102,2011,A1Locationinpatent:Page/Pagecolumn86
[3]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-EP2354135,2011,A1Locationinpatent:Page/Pagecolumn74
[4]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-EP2363398,2011,A1Locationinpatent:Page/Pagecolumn138-139
[5]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-US2011/245495,2011,A1Locationinpatent:Page/Pagecolumn48
[6]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-WO2012/17842,2012,A1Locationinpatent:Page/Pagecolumn237-239
[7]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-US2012/71668,2012,A1Locationinpatent:Page/Pagecolumn267
[8]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-US2012/95226,2012,A1Locationinpatent:Page/Pagecolumn40-41
[9]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-WO2012/53627,2012,A1Locationinpatent:Page/Pagecolumn224-225
[10]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-US2012/130081,2012,A1Locationinpatent:Page/Pagecolumn62
[11]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-US2012/264936,2012,A1Locationinpatent:Page/Pagecolumn43
[12]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-US8546584,2013,B2Locationinpatent:Page/Pagecolumn100;101
[13]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-US2015/197508,2015,A1Locationinpatent:Paragraph0251;0257;0258;0259;0260;0261;0262
[14]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-JP5875321,2016,B2Locationinpatent:Paragraph0243;0250;0251
[15]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-TWI565701,2017,BLocationinpatent:Page/Pagecolumn113;114;115
[1]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-EP2314565,2011,A1Locationinpatent:Page/Pagecolumn56
[2]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-EP2330102,2011,A1Locationinpatent:Page/Pagecolumn87-88
[3]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-US2012/71668,2012,A1Locationinpatent:Page/Pagecolumn265-266
[4]CurrentPatentAssignee:CHANGCHUNHAIPURUNSITECHNOLOGYCOLTD-CN111675713,2020,ALocationinpatent:Paragraph0118-0122
[1]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-US2012/98417,2012,A1
[2]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-US2011/147792,2011,A1
[3]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-US2011/285276,2011,A1
[4]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-US2012/25697,2012,A1
[5]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-US2012/104373,2012,A1
[6]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-US2012/133274,2012,A1
[7]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-US2013/9543,2013,A1Locationinpatent:Page/Pagecolumn
[8]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-US8697885,2014,B2Locationinpatent:Page/Pagecolumn
[1]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-US2012/104370,2012,A1
[2]CurrentPatentAssignee:SEMICONDUCTORENERGYLABORATORYCO.,LTD.-US2012/194062,2012,A1
[1]CurrentPatentAssignee:SAMSUNGSDICO.,LTD.-KR2015/130221,2015,ALocationinpatent:Paragraph0426-0428