[1]CurrentPatentAssignee:NANJINGTOPTOSEMICONDUCTORMATERIALCOLTD-US2017/125678,2017,A1Locationinpatent:Paragraph0174;0175;0176;0177;0178
[1]CurrentPatentAssignee:NANJINGTOPTOSEMICONDUCTORMATERIALCOLTD-CN108178765,2018,ALocationinpatent:Paragraph0111;0124;0126;0127
[1]Patent:CN110105225,2019,A.Locationinpatent:Paragraph0125-0126
[2]Patent:CN110183332,2019,A.Locationinpatent:Paragraph0098;0099
[1]CurrentPatentAssignee:SHAANXILIGHTEOPTOELECTRONICSMATERIALCO.,LTD-CN110183332,2019,ALocationinpatent:Paragraph0100;0101