[1]CurrentPatentAssignee:NANJINGTOPTOSEMICONDUCTORMATERIALCOLTD-CN111533716,2020,ALocationinpatent:Paragraph0071-0075
[1]CurrentPatentAssignee:NANJINGTOPTOSEMICONDUCTORMATERIALCOLTD-CN111548278,2020,ALocationinpatent:Paragraph0073-0077
[1]CurrentPatentAssignee:NANJINGTOPTOSEMICONDUCTORMATERIALCOLTD-CN111548278,2020,ALocationinpatent:Paragraph0053-0057
[1]CurrentPatentAssignee:NANJINGTOPTOSEMICONDUCTORMATERIALCOLTD-CN111548278,2020,ALocationinpatent:Paragraph0153-0157