[1]CurrentPatentAssignee:CHANGCHUNHAIPURUNSITECHNOLOGYCOLTD-CN107501193,2017,ALocationinpatent:Paragraph0060;0061;0062
[1]CurrentPatentAssignee:NANJINGTOPTOSEMICONDUCTORMATERIALCOLTD-US9938287,2018,B1Locationinpatent:Page/Pagecolumn98
[1]CurrentPatentAssignee:NANJINGTOPTOSEMICONDUCTORMATERIALCOLTD-US9938287,2018,B1
[1]CurrentPatentAssignee:NANJINGTOPTOSEMICONDUCTORMATERIALCOLTD-US9938287,2018,B1
[1]CurrentPatentAssignee:NANJINGTOPTOSEMICONDUCTORMATERIALCOLTD-US9938287,2018,B1